Abstract
RF characteristics of metal-insulator-metal (MIM) capacitors with SiO2/HfO2/SiO2 (SHS) were investigated using an equivalent circuit model that is associated with the main impedance ZMIM.cap and the substrate-related conductance Ysub. However, the parasitic capacitance in Ysub was lower than that of another element component in ZMIM.cap, which makes difficult for accurate RF modeling because the parasitic component was dominant at high frequency regions. As low parasitic component is eliminated from the modeling, the extracted capacitance for SHS MIM capacitor was stable up to 20 GHz. The Q-factor and resonant frequency (fr) point of SHS structure are 23.9 at 1 GHz and 9.76 GHz, respectively.
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