Abstract

This brief aimed to report study results of radio frequency integrated circuit applicability through RF characteristic analysis model extraction on the stacked metal-insulator- metal (MIM) capacitor. We used analysis method enhancing capacitance density per unit area via a parallel connection of two MIM capacitors vertically. The total capacitance of the stacked MIM capacitor was 2.05 fF/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and leakage current and breakdown voltage were 0.004 fA/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and more than 50 V, respectively. Moreover, VCC1 showed a value less than 40 ppm/V, while VCC2 showed a value less than 20 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Temperature coefficient of capacitance exhibited values less than 80 ppm/°C for every 25 °C increase between 25 °C and 125 °C. A specialized equivalent circuit with the parallel connection of MIM capacitance (CMIM1, CMIM2) was proposed for the stacked MIM capacitor. When extracted model parameter components were simulated, high accuracy was exhibited despite increased frequency by applying various parasitic components to the extraction.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call