RF and microwave power amplification using SiGe HBTs: issues and prospects

Zhenqiang Ma Zhenqiang Ma

doi:10.1109/icsict.2004.1435263

RF and microwave power amplification using SiGe HBTs: issues and prospects

Zhenqiang Ma Zhenqiang Ma

https://doi.org/10.1109/icsict.2004.1435263

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Publication Date: Oct 18, 2004

Citations: 1

Affiliation: University of Wisconsin–Madison

#Microwave Power Amplification #RF Power + Show 8 more

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Abstract

A comprehensive study on the correlation between the structures and operation conditions of SiGe power HBTs, for RF and microwave power amplification, is presented. Both theoretical and experimental data prove that the operation configuration, power amplification frequency and bias voltage of SiGe power HBTs critically depend on the device heterostructure design. It is also proven that employing a heat transfer counterbalanced layout structure can effectively improve the RF power performance of SiGe power HBTs. The application prospects of SiGe HBTs for high frequency RF and microwave power amplification are projected, based on this study.

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