RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성

Abstract

The properties of Al-doped ZnO (AZO) films were investigated as a function of gas ratio using an AZO (2 wt% ) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at and in Torr working pressure and with various ratios of gas. During the AZO film deposition process, partial gas affected the AZO film characteristics. The electron resistivity () was lowest and mobility () was highest in AZO films when the gas ratio was 2.5 %. When the gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing gas ratio in AZO films. The carrier concentration increased with increasing gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all gas ratios.