Abstract
GZO/ITO double layered films were deposited on unheated non-alkali glass substrates by RF magnetron sputtering using an ITO (<TEX>$SnO_2$</TEX>: 10 wt%) and GZO(<TEX>$Ga_2O_3$</TEX>: 5.57 wt%) ceramic targets, respectively. The electrical resistivity of GZO/ITO films depends on the thickness ratio between the GZO film and ITO film. With increasing ITO film thickness, the resistivity of GZO/ITO films decreased which due to large increase in the Hall mobility. Also, the crystallinity of GZO/ITO film was improved with an increase in ITO thickness which was evaluated by X-ray diffraction. The average transmittance of the films was more than 85% in the visible region, which is slightly higher than ITO single layer films.
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