Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb2

Abstract

Temperature- or pressure-driven n–p conduction-type switching has been described as an emerging phenomenon for potential applications as transistors, switches, and memory devices. The key challenge in the development of such n–p conduction-type switching materials is to establish maneuverable and controllable methods to achieve easy convertibility and nonvolatility. Herein, we report the first example of rewritable pressure and temperature dual-controlled n–p conduction-type switching in marcasite-type CrSb2. At room temperature, CrSb2 exhibits an unexcepted pressure-driven n–p conductivity-type switching around 12 GPa accompanied by a marcasite-to-arsenopyrite structural transition and a semiconductor-to-metal transition. The dramatic conduction-type switching is irreversible after pressure releasing at room temperature but reversible by annealing at a relatively low temperature (>80 °C). Accordingly, a multicycle bistability switching process is established under the dual regulation of both pressure and temperature. The underlying structure–property mechanism is revealed by in situ/ex situ characterization and analyses of the atomic-level microstructure, local lattice distortion, and residual stress induced by compression. This demonstration provides a new platform for the rational design of rewritable temperature/pressure-responsive photoelectric conversion devices.