Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films

Abstract

The rewritable bistable memory characteristics have been studied in polymethyl methacrylate (PMMA) and carboxylated multi-walled carbon nanotubes (CNT) composite films. The sandwich structure FTO/PMMA + CNTs/Ag devices were prepared by spin coating and vacuum evaporation process. The device exhibited rewritable bistable resistive switching with switch-on voltage of ~ − 1.5 V, switch-off voltage of ~ 3.4 V, and a high ON/OFF ratio almost of 105. The rewritable behavior of the FTO/PMMA + CNTs/Ag device has been investigated by the endurance test, retention test, and the write-read-erase-reread multiple-cycle tests. The FTO/PMMA + CNTs/Ag device exhibited good retention performance for 2 × 105 s and underwent 104 read pulses. The conduction mechanism in ON state obeys Ohmic conduction; simultaneously, for OFF state, trap-limited space-charge limited conduction was discovered to be the dominant conduction mechanism.