Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy

Abstract

In this study, we re-examine the electronic levels G1-G4 of gold-hydrogen complexes in Si by Laplace deep level transient spectroscopy. In Au doped n- and p-type Si, we analyse the depth profiles of the levels after wet-chemical etching, study their annealing behaviour and detect changes of their emission rates in the electrical field. We give evidence that G1, G3, and G2 are the double acceptor, acceptor, and donor level of the Au complex with one hydrogen atom, whereas G4 belongs to the Au complex with two hydrogen atoms and is probably an acceptor level.