Abstract
In InGaN-based light-emitting diodes, efficiency droop at high current density degrades device performance. Different strategies have been proposed by researchers to enhance the performance of InGaN-based light-emitting diodes numerically. We present a survey of the notable reported efficient simulated device structures, to date. We also discuss the simulation methodology employed in the state-of-the-art numerical simulators to study InGaN-based light-emitting diodes. Our survey gathers the influence of the layer engineering of each layer on the device performance of light-emitting diodes. Thus, different reported structures address the efficiency droop problem differently, thus, showing better optoelectronic properties as compared to the conventional structure.
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