Abstract
In this review, essential topics on reliability characterization of plasma-induced damage are discussed. First, the basic degradation of a metal-oxide-semiconductor (MOS) gate oxide from plasma processing steps is described. Second, the reliability characterization techniques and basics are discussed and problem areas are highlighted. Discussion points include the antenna ratio definition, test structure layout employing MOS transitors with and without antennas, stress and measurement sequence including a revealing stress, use of protection elements against plasma-charging, plasma-charging effects on metal-insulator-metal capacitors, and plasma-charging effects on high-k dielectrics of field-effect transistors.
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