Abstract
ZnO is a material having unique structural ,optical and electrical properties doping level, The c-axis lattice parameter shifts towards higher values with increase of manganese content in the film.The first part of this paper represents the synthesis of ZnO thin film by sol-gel technique and study of its structural properties by XRD. The next part of this review presents the influence of Mn ,In doping on structural properties of ZnO by XRD studies.XRD study shows that all film prepared in this work have wurtzite structure with lattice constants a=b=3.260A o c=5.214Ao. The doped films are found to show (002) preferential growth at low. Indium concentrations. An increase in Indium concentration causes a decrease in crystalline quality of films as confirmed by XRD technique .The XRD spectra of Mn doped ZnO also show that all samples have hexagonal wurtzite structures. The doping favours c-axis orientation along (002) planes upto 5% of Mn.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have