Abstract
Abstract Criteria and techniques of device-grade thin film silicon deposition for high efficiency solar cells developed in Panasonic/Sanyo were reviewed. By applying these techniques, record efficiencies were achieved for a-Si single junction, a-Si/a-SiGe tandem junction. We have also fabricated very high-efficiency a-Si/µc-Si tandem solar cells and modules with a very high µc-Si deposition-rate (>2.0 nm/s) of device-grade µc-Si layers using Localized Plasma Confinement CVD.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
