Abstract
Emerging 3rd generation photovoltaic technologies such as perovskite and dye-sensitized solar cells are very attractive for commercialization mainly due to their low-cost materials and fabrication processes. The main drawback of these devices is their poor long-term stability. To increase the long-term stability of these devices, a hermetic encapsulation is required. The hermeticity of encapsulated devices are measured and characterized using hermeticity tests according to standard test procedures. A review of the several techniques to measure the hermeticity is presented, addressing the test methods, limitations and applicability to perovskite and dye-sensitized solar cells glass frit encapsulated devices.
Highlights
Dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs) are included in the emerging third generation of PV technologies
Conventional DSSCs are prepared on conductive glass substrates and consist of a photoanode, a dye, an electrolyte, and a counter electrode
PSCs are typically fabricated on conductive glass substrates and comprise several layers: an electron transport layer (ETL), a mesoporous scaffold, a perovskite light absorber, a hole transport layer (HTL) and a back contact (Leijtens et al 2015)
Summary
Dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs) are included in the emerging third generation of PV technologies. Used sealant materials include thermo-plastics such as surlynTM, ethylene vinyl acetate (EVA) and UV and thermal cure epoxy resins These materials cannot provide long-term airtight encapsulation (Matteocci et al 2016). Glass frit materials have good wettability to most surfaces and can bond rough surfaces (Knechtel 2005) These materials are inert, provide an airtight encapsulation and have high bonding strength (Knechtel 2015). These properties make glass frits one of the most ideal sealant material to encapsulate technologies that require hermetic encapsulation, such as the third generation of PV technologies (Emami et al 2020). A review of the several leak rate measurements methods is presented in this work and their applicability to third generation of PV technologies is discussed
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