Abstract
Microelectronic devices are generally based on a large number of materials for electronics and printed circuit boards, including ceramics and polymers for chip and resistor housings, metal and semiconductors for the chip itself, metals (Al, Ni-Au, Pd-Au, Cu, Pd-Cu, etc.) for circuit paths, fibre reinforced epoxy binders, polyimide and polyurethane foils for dielectrics and various glues. Ultra-thin and dense films can be grown by atomic layer deposition (e.g. Al2O3, SiC, TiO2). In this research, growth of titanium oxide nano-rods using the CVD technique was experienced. We studied the effects of temperature and time and also the effect of Co catalyst on the growth of nano-rods so that we would be able to measure the titanium content in different times and temperatures. Our samples were studied using scanning electron microscopy (SEM), Raman spectroscopy, energy dispersive X-ray spectroscopy (EDX), dot mapping, atomic force microscopy (AFM) and X-ray diffraction (XRD).
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