Abstract
Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.
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