Review of SiC based Power Semiconductor Devices and their Applications

Abstract

Silicon based Power Semiconductor Devices are extensively used in power electronic applications for the last few decades. Recent developments in power electronics require devices with high power rating, switching frequency and operating temperature but silicon based devices do not facilitate these requirements. Wide band gap semiconductor devices like Silicon Carbide and Gallium Nitride are gaining popularity in overcoming the limitations of silicon based devices. The superior material properties of WBG semiconductor: band gap, electric field, thermal conductivity and electron mobility enables them to handle the requirements. This paper reviews the material properties of Silicon Carbide in comparison to Silicon. It also provides an overview of available SiC based power semiconductor devices and converter topologies.