Abstract
SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.
Highlights
silicon carbide (SiC) Hybrid switch (HyS) combines low conduction loss of Si insulatedgate bipolar transistors (IGBT) and low switching loss of SiC metal-oxide-semiconductor field-effect transistor (MOSFET), and the cost is closer to that of Si IGBT
Cost comparisons between SiC MOSFET and Si insulatedgate bipolar transistors (IGBT) with the same ratings are listed in Tab. 1 [6]
The combination of Si IGBT and Si MOSFET devices was investigated by compensating disadvantages 20 years ago [4]
Summary
The silicon carbide (SiC) power semiconductor has emerged as an attractive alternative for silicon (Si) devices [1,2,3,4,5]. The rated currents of Si MOSFETs are limited to small values when the voltage is over 900 V To overcome these challenges, the combination of Si IGBT and Si MOSFET devices was investigated by compensating disadvantages 20 years ago [4]. Hybrid switches (HyS) based on Si IGBT and SiC MOSFET have been studied [5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26]. It consists of a low power SiC MOSFET and a high-power Si IGBT.
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