Abstract
The availability of high power handling devices is of a great importance in the present power electronics industry. These high power ratings can be achieve by connecting existing devices in series or parallel depending on the application. The main problems associated with series and parallel connections are unequal sharing of voltage and current respectively. The active gate control techniques, snubber circuits and clamping circuits are some of the most common methods used to minimise the problem of unequal sharing of voltage and current. The aim of the paper is to review the available techniques to minimise the problems in series and parallel connections of insulated gate bipolar transistors.
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