Abstract
Resonant gate driver is a vital trend of research topic along with the development of high electron mobility transistor (HEMT). Compared with conventional gate driver, resonant gate driver achieves much lower power dissipation during switching transient and widely viewed as one essential technique for high frequency power conversion. This paper provides a state-of-art review and thorough comparison of different resonant gate driver topologies. Case study of two representative topologies is carried out. Application of resonant gate driver in Gallium Nitride (GaN) HEMT is discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
