Abstract
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors.
Highlights
The ultraviolet (UV) wavelength regime is typically divided into four wavelength ranges, i.e., UV-A (320 to 400 nm), UV-B (280 to 320 nm), UV-C (200 to 280 nm), and vacuum-UV (10 to 200 nm)
To enhance the material quality of epilayers grown on nonnative substrates, different approaches, e.g., epitaxial lateral overgrowth (ELOG), pulsed-ELOG (PLOG), migration-enhanced ELOG (MEELOG), patterned dielectric distributed Bragg reflector (DBR) embedded ELOG, and nanoscale-ELOG schemes, 043508-10
The continuously increasing development in UV-photonic devices has mainly resulted from the intensive research on nanophotonics and the advanced nanofabrication approaches applied to realize nanostructures
Summary
The ultraviolet (UV) wavelength regime is typically divided into four wavelength ranges, i.e., UV-A (320 to 400 nm), UV-B (280 to 320 nm), UV-C (200 to 280 nm), and vacuum-UV (10 to 200 nm) Across these ranges, there are huge needs to realize UV-based photonic and electronic devices, e.g., laser diodes (LDs), light-emitting diodes (LEDs), photodetectors (PDs), high-electron-mobility transistors (HEMTs), metal-oxide-semiconductor field effect transistors, and radio-frequency switches. We review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors (with the main focus on AlGaN material) to realize efficient UV-based photonic devices. We review the progress on using various nanophotonics schemes involving nanostructured interfaces and nanofabrication approaches adopted in the group III-nitride semiconductors for UV-based photonic devices. This review aims to provide a framework of existing nanophotonic approaches and their further development in advancing the UV-photonic devices based on the group III-nitride semiconductors
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