Review of high voltage silicon carbide device research at the army research laboratory

Abstract

The U.S. Army Research Laboratory has conducted research on high voltage silicon carbide thyristors and diodes in support of the Army's pulsed power applications. Such applications require light-weight, power-dense components to enable mobile platforms. The Army Research Laboratory is seeking to optimize thyristor and diode capability at the single device level, then integrate chips into larger modules to meet high voltage and high current switching needs. Compared to silicon semiconductors, silicon carbide's high breakdown field enables thinner high-voltage devices. The narrower drift region in turn facilitates faster turn-on capability and lower switching losses at very high voltages and current densities. The material's thermal conductivity and high Young's modulus make it ideal for high-power pulsed switching applications. Recent research developments that have increased die size, yield, and voltage blocking include production of larger material wafers, reduction in micropipe density, and reduction of basal plane dislocations.