Abstract
The state of the art of high brightness ion beam production for microlithography and trends of research and development in this field of activity is reviewed. High brightness and low-energy spread are crucial to the success of ion-beam lithography. Features of field emission liquid metal, melted dielectric, and cryogenic gaseous ion sources for fine focused beam production are discussed. Growth of energy spread and the drop in brightness by intrabeam interaction of ions are estimated. Limitation of positive ion-beam characteristics in plasma sources such as duoplasmatron, multicusp, rf, and microwave discharges sources are examined. Features of negative ion formation in surface plasma sources with cesium catalysis are discussed. Possibilities for ions cooling down to 1 eV in high-density beams are estimated. High-precision beam diagnostics will be discussed.
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