Abstract
This scientific paper represents a review of progress and developments which more concerned in Nanophotonic Gallium nitride. Because of the expansion in modern optical devices and time associated with new laboratory and applications, there is a growing need to study real-time, low-cost, and high-temperature applications for optical devices. These optical devices can be beneficial, industrially, or environmentally. The Nano-characteristics of Gallium nitride grown on Silicon wafer substrates by using pulsed laser deposition processes (PLD) as well as the characterization and analysis of its thin films using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM), the Atomic Force Microscopy(AFM), Transmission electron microscopy(TEM), Photoluminescence (PL), and the Ultraviolet–visible(UV–Vis) will discuss thoroughly in this paper. The review will provide technical information about Gallium nitride's analytical characteristics and its deposited applications on two-dimensional photonic Silicon substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
