Abstract
Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.
Highlights
Due to the continuous growth of environmental concerns, there is limited room left for the development of fossil fuel-based power generation [1,2,3], and the rapid growth of global energy consumption resulted in fast development of various renewable energy (RE)-based power generation technologies, smart grids, optimal operation and control algorithms, hybrid energy storage systems, advanced energy conversion and management systems, and state-of-the-art power semiconductor devices for designing advanced power converters used in the abovementioned energyand power-related systems
To provide engineers and researchers in the fields of power electronics and energy-related applications with timely technical information for the development of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) technologies, this paper reviewed a total of 162 technical reports and research papers focusing on GaN HEMT applications in mid- to high-power converters recently published in the open literature
Based on the results reported in the reviewed articles, GaN HEMTs effectively enable medium-voltage, mid- to high-power converters to achieve much higher system efficiencies, switching frequencies, power levels, and power densities
Summary
Due to the continuous growth of environmental concerns, there is limited room left for the development of fossil fuel-based power generation [1,2,3], and the rapid growth of global energy consumption resulted in fast development of various renewable energy (RE)-based power generation technologies, smart grids, optimal operation and control algorithms, hybrid energy storage systems, advanced energy conversion and management systems, and state-of-the-art power semiconductor devices for designing advanced power converters used in the abovementioned energyand power-related systems. As a result, replacing fossil fuel with renewable and affordable energy sources and increasing the system efficiencies of energy conversion and power generation with better power switching devices and control techniques are some of the urgent research topics [4,5] To support this development trend and achieve desired system performances, developing advanced power converters with better switching devices and control algorithms is extremely important. In the past eight years, there were a huge number of commercial reports and research papers regarding the application of WBG GaN- and SiC-based power switching devices published in the open literature. Comprehensive research reports and technical review papers on GaN HEMTs, previously published in the open literature, mainly focused on fabrication, device characteristics, converter design examples, and other general applications.
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