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Abstract
Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.
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