Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy

Abstract

Stacking faults (SFs) in 4H-SiC epitaxial wafers were inspected by using a mirror projection electron microscope (MPJ) [1, 2]. Dark and bright line contrasts of SFs in MPJ images represent surface morphology and crystal defects located in the epitaxial layer. Inspected SFs were classified into three types of SFs on the basis of the MPJ images. After classification, a cross section of each type of SF was observed by transmission electron microscopy (TEM) to verify the classification result. Complex SFs classified by MPJ images consisted of prismatic plane and basal plane SFs.