Reversible Total Ionizing Dose Effects in NiO/Ga2O3 Heterojunction Rectifiers

Abstract

NiO/Ga2O3 heterojunction rectifiers were exposed to 1Mrad fluences of Co-60 g-rays either with or without reverse biases. While there is small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma-photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000x reduction in forward current and 100x increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on-off ratio is also reduced by almost 5 orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of < 4 cm-1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current-voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes. Figure 1