Abstract
The magnetization $(M)$ of a ${\text{LaCoO}}_{3}$ film grown epitaxially on a piezoelectric substrate has been investigated in dependence on the biaxial in-plane strain. $M$ decreases with the reversible release of tensile strain, with a maximum change of at least 6% per 0.1% of biaxial strain near the Curie temperature $({T}_{C})$. The biaxial strain response of ${T}_{C}$ is estimated to be below 5 K/% in the tensile strain state. This is in agreement with results from statically strained films on various substrates. As possible origins of the strain-induced magnetization are considered (i) the strain-dependent Curie temperature, (ii) a strain-dependent magnetically inhomogeneous (phase-separated) state, and (iii) a strain-dependent magnetic moment (spin state) of Co ions. The ${T}_{C}$ shift is found insufficient to explain the measured strain-induced magnetization change but contributions from mechanism (ii) or (iii) must be involved.
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