Abstract
The ability to tune both magnetic and electric properties in magnetoelectric (ME) composite heterostructures is crucial for multiple transduction applications including energy harvesting or magnetic field sensing, or other transduction devices. While large ME coupling achieved through interfacial strain-induced rotation of magnetic anisotropy in magnetostrictive/piezoelectric multiferroic heterostructures has been demonstrated, there are presently certain restrictions for achieving a full control of magnetism in an extensive operational dynamic range, limiting practical realization of this effect. Here, we demonstrate the possibility of generating substantial reversible anisotropy changes through induced interfacial strains driven by applied electric fields in magnetostrictive thin films deposited on (0 1 1)-oriented domain-engineered ternary relaxor ferroelectric single crystals with extended temperature and voltage ranges as compared to binary relaxors. We show, through a combination of angular magnetization and magneto-optical domain imaging measurements, that a 90° in-plane rotation of the magnetic anisotropy and propagation of magnetic domains with low applied electric fields under zero electric field bias are realized. To our knowledge, the present value attained for converse magnetoelectric coupling coefficient is the highest achieved in the linear piezoelectric regime and expected to be stable for a wide temperature range, thus representing a step towards practical ME transduction devices.
Highlights
As a consequence, the PIN-PMN-PT crystals have a larger useable temperature range, as well as higher coercive electric fields (EC) compared to other relaxor ferroelectrics[12,13]
Fe50Co50 and Fe50Co50/Ag multilayered films were deposited on (0 1 1) cut and poled PIN-PMN-PT single crystals allowing for reversible voltage control of magnetism with a broader operational range
We have demonstrated tuning of magnetization and direct observation of propagation of magnetic domains as an immediate result of the large piezoelectric strain response of PIN-PMN-PT
Summary
The nearly complete 90° rotation of the easy axis in the FeCo/Ag multilayer film mentioned above becomes evident if we compare the change in magnetization along the [1 0 0] and [0 1 1] directions at 0.5 mT (0.4 kA/m) bias field with an AC electric field (as shown in Fig. 3) measured in a VSM. (a) The time dependent applied electric field and (b) the resultant change in magnetization of the FeCo/Ag multilayered film measured along [100] and [011] in-plane directions of the PIN-PMN-PT crystal. For both positive and negative magnetic field values, domain formation in the FeCo/Ag multilayered film on PIN-PMN-PT is evident by the bright and dark lines in Fig. 4(a,c) respectively. For the present FeCo/Ag multilayer on PIN-PMN-PT, we demonstrate giant non-resonant ME coupling at room temperature and at applied fields below the electric coercive field ( not utilizing electrostriction and not electrically fatiguing the crystal), a benchmark which distinguishes itself in comparison to previous studies and represents a significant step towards energy efficient, fatigue resistant ME transduction devices
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