Abstract
A single nano-cell-element of chalcogenide-random access memory wasfabricated by using the focused ion beam method. The minimum contactsize between the Ge2Sb2Te5 phase change film andthe top electrode film for the cell element is with diameter of 60 nm.The reversible phase transition between the RESET state and the SETstate was successively realized. The minimum SET current is obtained tobe about 0.28 mA.
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