Abstract
The reversible breakdown walkout in the Si/sub 3/N/sub 4/ passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V/sub B/s) eventually reached stable region or reverse region depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.
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