Abstract
X-ray analysis of the near-surface region of as-cut single-crystalline strontium titanate (001) wafers showed a reversible electric field-induced structure change at room temperature. To explain this phenomenon, a model is proposed which is based on the field-driven diffusional transport of oxygen and strontium along dislocation cores to the near-surface region and the growth of monolayer SrO precipitates by dislocation climb. Precipitate growth causes a lateral compressive stress in the near-surface region, which counteracts the diffusion of oxygen and strontium to the surface. By estimating the change of the Gibbs free energy due to precipitate formation, the lateral precipitate size and the resulting mean strain in the near-surface region is analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
