Abstract
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
Highlights
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits
The atomic force microscopy (AFM) image of the synthesized GO sheet is illustrated in Supplementary Figure 1, with thickness of around 1.5 nm
Transmission electron microscopy (TEM) analysis was conducted by depositing drop casted film of PDPP-TBT on carbon coated grids
Summary
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Over the past few years materials with balanced charge carrier transport have received special interest owing to their potential applications in light emitting transistors[1,2,3], complementary metal oxide semiconductor (CMOS)-like logic circuits[4,5,6], sensors[7,8,9], spintronics[10] and memories[11,12] On this aspect, the possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely attractive for the development of high performance and low-power consuming ambipolar logic circuits with low leakage currents[13,14,15]. We report a novel approach on systematic control over polarity (from holes to electron or vice versa) in transistors based on solution processed semiconducting polymer/GO hybrid system. Our proposed architecture provides a powerful way to achieve charge conversion of one polarity to another in a controlled manner and thereby relaxing the demands of materials choice in various applications such as planar p-n junctions and ambipolar-like logic circuits
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
