Abstract
The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. Subsequent irradiation by 120 keV Ne+ ions turns the thin film completely to the paramagnetic A1 phase. Repeated annealing at 300 °C for 60 min results in 100% magnetic B2 phase, i.e. a process that appears to be reversible at least twice. The A1 → B2 transformation takes place without any plane-perpendicular diffusion while Ne+ irradiation results in significant interlayer mixing.
Highlights
The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min
We report a study performed by conversion-electron Mössbauer spectroscopy (CEMS), high-angle X-ray diffraction (XRD), neutron reflectometry (NR), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) on an FeRh thin film deposited on MgO(100) substrate at 200 °C
MgO(100) substrate at 200 °C using molecular beam epitaxy (MBE) technique; the actual composition and thickness of the layers are given in chapter ‘Experimental methods’
Summary
The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. The existence of a monoclinic antiferromagnetic (AFM) ground state was predicted by DFT calculations in the equiatomic FeRh alloy in 2 01616 This phase could not be identified in thin films by Wolloch and co-workers[17]. By introducing strain in the FeRh crystal lattice, this phenomenon can be reversed and the magnetic transition can be triggered by deformation This was demonstrated in 2014 by Cherifi and co-workers[12] and investigated in more detail by Phillips and co-workers from the same group in 2 01532 in a way that the deformation was induced by the piezoelectricity of BaTiO3 on which the FeRh thin layer was epitaxially evaporated. The feasibility of building multiferroic FeRh/PMN-PT devices adjustable by only varying the Scientific Reports | (2020) 10:13923
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