Abstract

AbstractSecond‐order nonlinear optical processes enable a wide range of applications used in research and industry. The majority of available second‐order nonlinear devices however relies on bulk nonlinear crystals with low second‐order nonlinearity. By exploiting the advancements made in integrated optics, materials with large second‐order nonlinearity can enable efficient and small‐sized on‐chip nonlinear devices at low cost. Unfortunately, silicon and silicon nitride, mostly used for photonics integrated circuits exhibit negligible second‐order nonlinearity (χ(2)) and alternate materials have to be investigated. Lead zirconate titanate (PZT) thin films with high second‐order nonlinearity stand as a good candidate for on‐chip nonlinearity. An electric‐field induced tuning of χ(2) is demonstrated here in PZT thin films grown on glass substrates with a tuning efficiency of 3.35 pm V−2. Strong second‐harmonic generation is recorded and a very high dominant tensor component of 128 pm V−1 is reported. The χ(2) of the PZT thin films can be reversed by poling with a DC electric field at room temperature. This opens avenues for highly efficient and tunable on‐chip nonlinear devices.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.