Abstract
AbstractDomain wall motions mainly affect all kinds of properties of ferroelectric materials, such as piezoelectricity, dielectric response, and mechanical loss, and the extrinsic contributions associated with domain wall motions have always been an important issue. In this study, the reversible and irreversible extrinsic contributions to the dielectric properties of [011]C‐oriented 0.27Pb(In1/2Nb1/2)O3‐0.46Pb(Mg1/3Nb2/3)O3‐0.27PbTiO3:Mn single crystals have been extracted by the Rayleigh analysis. We found that in the unpoled samples, the extrinsic contributions of reversible and irreversible domain wall motions to dielectric properties significantly reduced, whereas after poling, only the irreversible extrinsic contribution decreased. The pinning effect in the 2R domain structure is much weaker than that in the 4R domain structure, leading to the low enhancement of Qm and a slight decrease in piezoelectricity caused by acceptor doping in 2R domain structure. This study explores the domain wall dynamics of acceptor‐doped single crystals and mainly guides on further performance optimization in PbTiO3‐based relaxor single crystals.
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