Abstract
Reverse breakdown in Cu(In,Ga)Se2 (CIGS) solar cells can lead to defect creation and performance degradation. We present pulsed reverse-bias experiments, where we stress CIGS solar cells with a short reverse voltage pulse of ten milliseconds and detect the electrical and thermal response of the cell. This way, we limit the duration of the reverse stress, allowing us to study the initial stages of reverse-bias defect creation in CIGS solar cells and modules. Our results show that permanent damage can develop very fast in under milliseconds. Furthermore, we find the location of defect creation as well as the susceptibility to defect creation under reverse bias depends strongly on whether the cell is encapsulated or not, where encapsulated cells are generally more robust against reverse bias.
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