Abstract
In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors “p” and “n” plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.
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