Abstract
Applied Materials® newly launched advanced 300mm plasma etcher, Mesa® chamber implemented many key hardware modification to provide much more robust process knobs to improve the depth uniformity and CD uniformity for critical applications of <32nm technology. The new features including DMC,MRAD and others features focus on the innovation of Top ICP Source to optimize ion flux distribution uniformity to improve the Etch Rate uniformity and CD uniformity. As result the whole wafer uniformity can achieve 1~1.5nm (3σ). This article will focus on two of new features: DMC and MRAD which can solve the special distribution map to further improve uniformity significantly. The discussion includes hardware fundamental introduction and plasma simulation result as well as supporting wafer result.
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