Reverse Leakage Current in GaAs/AlGaAs Self Electro-Optic Effect Devices

Abstract

The self-electro-optic effect device (SEED) and the symmetric SEED (S-SEED) have demonstrated considerable applications for photonic switching and logic functionality. A SEED consists of a p-i-n, mesa diode, with a multiple-quantum-well structure for the i region. The symmetric SEED consists of two p-i-n mesa diodes connected in series. The S-SEED has been fabricated in functional arrays containing as many as 32×64 elements. The SEED and S-SEED are operated under a reverse bias, thus low reverse leakage is desired. As the magnitude of the reverse leakage current increases, more incident laser power is required to switch device states and then hold that state. Therefore, understanding the origins of the reverse leakage current and its dependence on mesa and array size is imperative for optimizing device performance.