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Abstract
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation.
Highlights
We show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, creating a tunneling barrier
Graphene is a promising material in the application of high speed field effect transistors (FETs) and many efforts have been focused on the study of the intrinsic transport property of graphene.[1,2,3,4]
While the maximum resistivity at charge neutral point has been predicted to have a universal value, the on state conductivity of graphene FETs are dictated by metal graphene contact.[5]
Summary
Reverse degradation of nickel graphene junction by hydrogen annealing We show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, creating a tunneling barrier. To understand the impact of hydrogen annealing on the both graphene channel and the metal junction, both four point kelvin probe structures and standard transmission line structures were fabricated in the same die.
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