Abstract
Current density j, measured as a function of reverse voltage V R in rectifying TeSeCd structures, is found to be much lower under pulsed than steady voltage conditions. For pulsed voltages, it is observed that ln j is proportional to (V 0 + V R) l n , with n between 2 and 3 and V 0 = 0.5 V. This form of dependence is consistent with reduction of the barrier potential by the electric field in the depletion layer. As the applied frequency is increased from 20 to 10 6 Hz, the measured parallel junction capacitance is found to show an approximate 4 to 1 decrease, with the frequency-dependent portion varying as ( frequency) −1 2 at higher frequencies. This is in accordance with theory in the literature for deep acceptors, which are thus considered to be dominant in the selenium of the structures. Trap release times, determined within the depletion layer, are found to decrease with increase in the total concentration of deep acceptors.
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