Abstract
Annealing processes have been studied in thermal-neutron irradiated, heavily arsenic-doped, n -type germanium crystals with initial donor concentrations of 3.24×10 18 , 3.32×10 18 and 5.20×10 18 cm -3 by measuring the resistivity and the Hall effect after isochronal annealings. The concentration of conduction electrons, the resistivity and the Hall mobility recover stepwise at essentially the same annealing temperatures for the three quantities and different samples. In the Hall mobility recovery, “reverse” annealing is observed over an annealing-temperature range from 250 to 320°C for all samples, in contrast to monotonic recovery of the carrier concentration and the resistivity. The reverse annealing is interpreted as being due to dissociation of vacancy-arsenic complexes formed in the preceding annealing process.
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