Abstract
Resistive random access memory (RRAM) device based on conductive filaments (CF) is a promising candidate for next-generation nonvolatile memory applications. A detailed understanding of the resistive switching phenomenon is very important for RRAM development. In this paper, a numerical physics-based drift/diffusion model is presented to examine the resistive switching characteristic and morphological evolution of CF channels in AlOx based RRAM device. The experiment phenomenon and simulated results suggest that CF channels formed in the oxide film are composed of Cu metal and oxygen vacancy.
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