Abstract

Solid-to-solid transitions usually occur via athermal nucleation pathways on pre-existing defects due to immense strain energy. However, the extent to which athermal nucleation persists under low strain energy comparable to the interface energy, and whether thermally-activated nucleation is still possible are mostly unknown. To address these questions, the microscopic observation of the transformation dynamics is a prerequisite. Using a charged colloidal system that allows the triggering of an fcc-to-bcc transition while enabling in-situ single-particle-level observation, we experimentally find both athermal and thermally-activated pathways controlled by the softness of the parent crystal. In particular, we reveal three new transition pathways: ingrain homogeneous nucleation driven by spontaneous dislocation generation, heterogeneous nucleation assisted by premelting grain boundaries, and wall-assisted growth. Our findings reveal the physical principles behind the system-dependent pathway selection and shed light on the control of solid-to-solid transitions through the parent phase’s softness and defect landscape.

Highlights

  • Solid-to-solid transitions usually occur via athermal nucleation pathways on pre-existing defects due to immense strain energy

  • To what extent the athermal nucleation persists as the strain energy reduces and whether there is a new realm of nucleation behaviours, e.g. thermally activated nucleation and interface energy-dominated pathways, remains mostly unknown

  • We reveal three new transition pathways: the in-grain homogeneous nucleation driven by spontaneous dislocation generation, the heterogeneous nucleation assisted by premelting grain boundaries, and the wall-assisted growth

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Summary

Introduction

Solid-to-solid transitions usually occur via athermal nucleation pathways on pre-existing defects due to immense strain energy. They include the three pathways observed at 10 mM, which are initiated from pre-existing bcc nuclei at different sites in the system (inside the fcc grains, on the grain boundaries, and at the flat wall surface).

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