Abstract
InAsxP1−x nanowires are promising building blocks for future optoelectronic devices and nanoelectronics. Their structure may vary from nanowire to nanowire, which may influence their average optoelectronic properties. Therefore, it is highly important for their applications to know the average properties of an ensemble of the nanowires. Structural properties of the InAsxP1−x-InP core–shell nanowires were investigated using the coplanar x-ray diffraction performed at a synchrotron facility. Studies of series of symmetric and asymmetric x-ray Bragg reflections allowed us to determine the 26% ± 3% of As chemical composition in the InAsxP1−x core, core–shell relaxation, and the average tilt of the nanowires with respect to the substrate normal. Based on the x-ray diffraction, scanning, and transmission electron microscopy measurements, a model of the core–shell relaxation was proposed. Partial relaxation of the core was attributed to misfit dislocations formed at the core–shell interface and their linear density was estimated to be 3.3 ± 0.3 × 104 cm−1.
Highlights
The AIIIBV semiconductor nanowires (NWs) are one-dimensional nanostructures based on such materials as indium phosphide (InP), indium arsenide (InAs), and indium arsenide phosphide (InAsxP1−x)
Structural properties of the InAsxP1−x-InP core– shell nanowires were investigated using the coplanar x-ray diffraction performed at a synchrotron facility
This research aimed to investigate the structure of an ensemble of InAsxP1−x-InP core–shell NWs grown on (111) InP substrate using a combination of coplanar x-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) measurements
Summary
The AIIIBV semiconductor nanowires (NWs) are one-dimensional nanostructures based on such materials as indium phosphide (InP), indium arsenide (InAs), and indium arsenide phosphide (InAsxP1−x). They have attracted increasing attention due to their unique properties related to surface and quantum confinement effects allowing application for transistors, solar cells, single photon sources, lasing, sensors, qubits or thermoelectric materials, and light-emitting diodes [1,2,3]. The typical structure for the InAsxP1−x NWs is a mixture of zinc-blende (ZB) and wurtzite (WZ) phases called polymorphism [3, 4]. We assume, based on the electron microscopy and x-ray diffraction studies, that the structure of the NWs is pure wurtzite
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