Abstract

Antimony trisulfide (Sb2S3) is a kind of emerging light-harvesting material with excellent stability and abundant elemental storage. Due to the quasi-one-dimensional symmetry, theoretical investigations have pointed out that there exist complicated defect properties. However, there is no experimental verification on the defect property. Here, we conduct optical deep-level transient spectroscopy to investigate defect properties in Sb2S3 and show that there are maximum three kinds of deep-level defects observed, depending on the composition of Sb2S3. We also find that the Sb-interstitial (Sbi) defect does not show critical influence on the carrier lifetime, indicating the high tolerance of the one-dimensional crystal structure where the space of (Sb4S6)n ribbons is able to accommodate impurities to certain extent. This study provides basic understanding on the defect properties of quasi-one-dimensional materials and a guidance for the efficiency improvement of Sb2S3 solar cells.

Highlights

  • Antimony trisulfide (Sb2S3) is a kind of emerging light-harvesting material with excellent stability and abundant elemental storage

  • Deeplevel defect whose activation energy is much higher than kBT from conduction band minimum (CBM) or valence band maximum (VBM) is detrimental to photogenerated carrier lifetime and transport[1]

  • These defects result in the trap-assisted Shockley–Read–Hall[2,3] (SRH) recombination in solar cells, which is the primary cause of open-circuit voltage (VOC) loss

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Summary

Introduction

Antimony trisulfide (Sb2S3) is a kind of emerging light-harvesting material with excellent stability and abundant elemental storage. To transfer this distinctive structural advantage into efficient carrier transport and final power conversion efficiency (PCE), one must understand and control the defect properties, in particular the deep-level defects. This requirement has spurred intense interests in exploring the defect properties of such materials, especially from theoretical perspective, which revealed complicated defect characteristics it has only two kinds of elements[8,9,10,11]. To date there is a lack of experimental verification of the defect properties associated with the structure and compositions, which induces ambiguity in the fabrication of high-quality Sb2S3 films for efficient solar cells

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