Abstract
Retraction of ‘High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory’ by Writam Banerjee et al., Nanoscale, 2014, advance article (C4NR05077K)
Highlights
Retraction of ‘High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory’ by Writam Banerjee et al, Nanoscale, 2014, advance article (C4NR05077K)
We found that the results reported were not reproducible and the improvement upon reported values in the literature that we first observed was not distinguishable
After a detailed analysis of the RRAM (Resistive random access memory) using HRTEM, we have found that no switching layer was observed on the sides of the W electrode and that there was an unwanted WOx layer at the W/AlOx interface, both of which we are unable to account for
Summary
Retraction of ‘High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory’ by Writam Banerjee et al, Nanoscale, 2014, advance article (C4NR05077K). Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in Cite this: Nanoscale, 2015, 7, 5545 selector-less resistive random access memory
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