Abstract

Abstract The control of the Al SiC interfacial reaction is a critical process in the preparation of SiC-reinforced Al matrix composites. The brittle phase Al4C3 formed during the interfacial reaction can reduce the strength, elastic modulus and corrosion resistance of the composites. The impregnation method was used in this paper to observe the interfacial reaction between pure Al and SiC under different reaction conditions. It was revealed that an increase in temperature is beneficial to the decomposition of SiC, the increase of atomic diffusion rate and the nucleation of Al4C3. Furthermore, an extension of reaction time promoted the further nucleation and growth of Al4C3. Meanwhile, the experimental results showed that Cu, Si and Mg all can reduce the amount of Al4C3 formed on the interface to varying degrees and function through different influence mechanisms. These results provide significant guidance for the preparation of Al/SiC used in electronic packaging with good thermal conductivity.

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