Retracted: Micromechanical properties characterization of 4H–SiC single crystal by indentation and scratch methods

Abstract

Growth and micromachining of single crystal silicon carbide (SiC) have drawn extensive attention in wide bandgap semiconductors and remained challenging. The micromechanical properties (i.e., hardness, elastic modulus, fracture toughness), which are the key to machinability and machining quality (and therefore the yield of the grown SiC), of 4H–SiC were assessed by nanoindentation, microhardness, and microscratch tests. Consistent values of true indentation hardness of 4H–SiC can be obtained by different approaches without the need for the area function of the indenter. Accurate determination of elastic modulus (i.e., 583.5 GPa) and indentation hardness (i.e., 38 GPa) of 4H–SiC by the instrumented indentation technique requires low loads with slight indentation-induced damage. Consistent values of fracture toughness Kc of 4H–SiC were obtained by different methods such as the Vickers/Berkovich indenter-induced cracking method (2.1 MPa·m1/2), energy-based nanoindentation approaches (the critical void volume fraction of 0.062 should be used for 4H–SiC when the deterioration of indentation hardness is used), and linear elastic fracture mechanics (LEFM)-based scratch approach with a spherical indenter (2.6 MPa·m1/2). This work provides the guidance for the mechanical machining of 4H–SiC wafers and the paradigm of micromechanical characterization of brittle solids by indentation and scratch technologies.